Etching Plasmas

Diagnostics of etching plasmas *

Radio-frequency excited, low-pressure plasmas in halogen-containing gases are widely used to etch submicronic features in a range of materials during integrated circuit manufacture. Costly process-drift problems are often caused by the ubiquitous deposition of polymer layers on the reactor walls. Simple and robust sensors of the reactor performance are needed to monitor and manage these effects...

Etching with Electron Beam Generated Plasmas

A Review of SiC Reactive Ion Etching in Fluorinated Plasmas

Research and development in semiconducting silicon carbide (SiC) technology has produced significant progress in the past five years in many areas: material (bulk and thin film) growth, device fabrication, and applications. A major factor in this rapid growth has been the development of SiC bulk crystals and the availability of crystalline substrates. Current leading applications for SiC device...

Etching of xerogel in high-density fluorocarbon plasmas

s of the 44th National Symposium of the American Vacuum Society, San Jose, CA, 20–24 Oct. 1997, p. 215. S.-J. Wang, I.-S. Jin, and H.-H. Park, Surf. Coat. Technol. 100–101, 59 ~1998!. M. Schaepkens, N. R. Rueger, J. J. Beulens, X. Li, T. E. F. M. Standaert, P. J. Matsuo, and G. S. Oehrlein, J. Vac. Sci. Technol. A 17, 3272 ~1999!. H.-H. Park, M.-H. Jo, H.-R. Kim, and S.-H. Hyon, J. Mater. Sci. ...

Silicon etching in NF3/O2 remote microwave plasmas

The etching of silicon in remote microwave discharges fed with NF3 /O2 has been investigated. In situ ellipsometry and x-ray photoelectron spectroscopy ~XPS! were used to monitor surface effects, while mass spectrometry was used to monitor the gas phase dynamics. Varying the microwave power from 600 to 1400 W has little effect, due to the near complete dissociation of the NF3, even at lower pow...